Intrinsic optical gain of ultrathin silicon quantum wells from first-principles calculations
Optical gains of ultrathin Si(001) quantum wells are calculated from first principles, and found to be positive because of an intrinsic quantum confinement effect. The gain of the ultrathin silicon film is comparable to that of the bulk GaAs if the carrier density is large enough. The impact of surf...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
2009-06-24.
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| Subjects: | |
| Online Access: | Get fulltext |