Intrinsic optical gain of ultrathin silicon quantum wells from first-principles calculations
Optical gains of ultrathin Si(001) quantum wells are calculated from first principles, and found to be positive because of an intrinsic quantum confinement effect. The gain of the ultrathin silicon film is comparable to that of the bulk GaAs if the carrier density is large enough. The impact of surf...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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2009-06-24.
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| Online Access: | Get fulltext |
| LEADER | 00911 am a22001333u 4500 | ||
|---|---|---|---|
| 001 | 353143 | ||
| 042 | |a dc | ||
| 100 | 1 | 0 | |a Saito, Shinichi |e author |
| 700 | 1 | 0 | |a Yuji, Suwa |e author |
| 245 | 0 | 0 | |a Intrinsic optical gain of ultrathin silicon quantum wells from first-principles calculations |
| 260 | |c 2009-06-24. | ||
| 856 | |z Get fulltext |u https://eprints.soton.ac.uk/353143/1/PRB09.pdf | ||
| 520 | |a Optical gains of ultrathin Si(001) quantum wells are calculated from first principles, and found to be positive because of an intrinsic quantum confinement effect. The gain of the ultrathin silicon film is comparable to that of the bulk GaAs if the carrier density is large enough. The impact of surface structure of the silicon film on the efficiency of light emission is also investigated and we found that SiO2 crystal that forms a strainless connection with a Si(001) surface such as quartz enhances optical gain. | ||
| 655 | 7 | |a Article | |