A dual-gate graphene FET model for circuit simulation - SPICE implementation
This paper presents a SPICE compatible model of a dual-gate bilayer graphene field effect transistor (GFET). The model describes the functionality of the transistor in all the regions of operation for both hole and electron conduction. We present closed form analytical equations that define the boun...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
2013-05-06.
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| Online Access: | Get fulltext |
| LEADER | 01197 am a22001573u 4500 | ||
|---|---|---|---|
| 001 | 350383 | ||
| 042 | |a dc | ||
| 100 | 1 | 0 | |a Umoh, Ime |e author |
| 700 | 1 | 0 | |a Kazmierski, Tomasz |e author |
| 700 | 1 | 0 | |a Al-Hashimi, Bashir |e author |
| 245 | 0 | 0 | |a A dual-gate graphene FET model for circuit simulation - SPICE implementation |
| 260 | |c 2013-05-06. | ||
| 856 | |z Get fulltext |u https://eprints.soton.ac.uk/350383/1/GrapheneFETmodel.pdf | ||
| 520 | |a This paper presents a SPICE compatible model of a dual-gate bilayer graphene field effect transistor (GFET). The model describes the functionality of the transistor in all the regions of operation for both hole and electron conduction. We present closed form analytical equations that define the boundary points between the regions to ensure Jacobian continuity for efficient circuit simulator implementation. A saturation displacement current is proposed to model the drain current when the channel becomes ambipolar. The model proposes a quantum capacitance that varies with the surface potential. The model has been implemented in Berkeley SPICE-3 and it shows a good agreement against experimental data with the NRMS error less than 10% | ||
| 540 | |a other | ||
| 655 | 7 | |a Article | |