High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode

High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications.

Bibliographic Details
Main Authors: Gardes, F.Y (Author), Brimont, A. (Author), Sanchis, P. (Author), Rasigade, G. (Author), Marris-Morini, D. (Author), O'Faolain, L. (Author), Dong, F. (Author), Fedeli, J.M (Author), Dumon, P. (Author), Vivien, L. (Author), Krauss, T.F (Author), Reed, G.T (Author), Martí, J. (Author)
Format: Article
Language:English
Published: 2009-11-23.
Subjects:
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