Growth of Carbon Nanotubes on HfO2 towards Highly Sensitive Nano-Sensors

Growth of Carbon Nanotubes on HfO2 towards Highly Sensitive Nano-Sensors

Carbon nanotube (CNT) growth on HfO2 is reported for the first time. The process uses a combination of Ge and Fe nanoparticles and achieves an increase in CNT density from 0.15 to 6.2 mm length/mm2 compared with Fe nanoparticles alone. The synthesized CNTs are assessed by the fabrication of back-gat...

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Bibliographic Details
Main Authors: Uchino, Takashi (Author), Ayre, G. (Author), Smith, D. C. (Author), Hutchison, J. L. (Author), de Groot, C.H (Author), Ashburn, Peter (Author)
Format: Article
Language:English
Published: 2010-04-01.
Subjects:
Article
Online Access:Get fulltext
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100 1 0 |a Uchino, Takashi  |e author 
700 1 0 |a Ayre, G.  |e author 
700 1 0 |a Smith, D. C.  |e author 
700 1 0 |a Hutchison, J. L.  |e author 
700 1 0 |a de Groot, C.H.  |e author 
700 1 0 |a Ashburn, Peter  |e author 
245 0 0 |a Growth of Carbon Nanotubes on HfO2 towards Highly Sensitive Nano-Sensors 
260 |c 2010-04-01. 
856 |z Get fulltext  |u https://eprints.soton.ac.uk/271796/1/JJAP-49-04DN11.pdf 
520 |a Carbon nanotube (CNT) growth on HfO2 is reported for the first time. The process uses a combination of Ge and Fe nanoparticles and achieves an increase in CNT density from 0.15 to 6.2 mm length/mm2 compared with Fe nanoparticles alone. The synthesized CNTs are assessed by the fabrication of back-gate CNT field-effect transistors with Al source/drain contacts for nano-sensor applications. The devices exhibit excellent p-type behavior with an Ion=Ioff ratio of 105 and a steep sub-threshold slope of 130 mV/dec. 
655 7 |a Article 

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