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01215 am a22001573u 4500 |
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270863 |
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|a Kazmierski, Tom
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|a Zhou, Dafeng
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|a Al-Hashimi, Bashir
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|a Ashburn, Peter
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|a Numerically efficient modelling of CNT transistors with ballistic and non ballistic effects for circuit simulation
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|c 2010-01.
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|z Get fulltext
|u https://eprints.soton.ac.uk/270863/1/2010_Kazmierski_CNT_modelling.pdf
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|a This paper presents an efficient carbon nanotube (CNT) transistor modeling technique which is based on cubic spline approximation of the non-equilibrium mobile charge density. The approximation facilitates the solution of the selfconsistent voltage equation in a carbon nanotube so that calculation of the CNT drain-source current is accelerated by at least two orders of magnitude. A salient feature of the proposed technique is its ability to incorporate both ballistic and nonballistic transport effects without a significant computational cost. The proposed models have been extensively validated against reported CNT ballistic and non-ballistic transport theories and experimental results.
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