Numerically efficient modelling of CNT transistors with ballistic and non ballistic effects for circuit simulation
This paper presents an efficient carbon nanotube (CNT) transistor modeling technique which is based on cubic spline approximation of the non-equilibrium mobile charge density. The approximation facilitates the solution of the selfconsistent voltage equation in a carbon nanotube so that calculation o...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2010-01.
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| Subjects: | |
| Online Access: | Get fulltext |
| Summary: | This paper presents an efficient carbon nanotube (CNT) transistor modeling technique which is based on cubic spline approximation of the non-equilibrium mobile charge density. The approximation facilitates the solution of the selfconsistent voltage equation in a carbon nanotube so that calculation of the CNT drain-source current is accelerated by at least two orders of magnitude. A salient feature of the proposed technique is its ability to incorporate both ballistic and nonballistic transport effects without a significant computational cost. The proposed models have been extensively validated against reported CNT ballistic and non-ballistic transport theories and experimental results. |
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