A Vertical Transport Geometry for Electrical Spin Injection and Extraction in Si
Schottky barriers formed between ferromagnetic metal and Semiconductor are of particular interest for spin injection and detection experiments. Here, we investigate electrical spin polarized carrier injection and extraction in Si using a Co/Si/Ni vertical structure built on a 250 nm thick Si membran...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
2009.
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| Subjects: | |
| Online Access: | Get fulltext |