The role of tunnel barriers in Phase-State Low Electron-Number Drive Transistors (PLEDTRs)
This paper presents a numerical analysis of the role of tunnel barriers in explaining the experimental I-V characteristics of a new vertical tunnel transistor called Phase-state Low Electron-number Drive Transistor (PLEDTR), used for constructing a high-speed and high-capacity gain cell. Introducing...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
2001-06.
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| Subjects: | |
| Online Access: | Get fulltext |