Temperature dependence of the collector current of bipolar transistors with epitaxial and ion implanted bases
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
1996.
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| Subjects: | |
| Online Access: | Get fulltext |
| LEADER | 00573 am a22001813u 4500 | ||
|---|---|---|---|
| 001 | 250933 | ||
| 042 | |a dc | ||
| 100 | 1 | 0 | |a Ashburn, P |e author |
| 700 | 1 | 0 | |a Boussetta, H |e author |
| 700 | 1 | 0 | |a Hashim, M D R |e author |
| 700 | 1 | 0 | |a Chantre, A |e author |
| 700 | 1 | 0 | |a Mouis, M |e author |
| 700 | 1 | 0 | |a Vincent, G |e author |
| 700 | 1 | 0 | |a Parker, G J |e author |
| 245 | 0 | 0 | |a Temperature dependence of the collector current of bipolar transistors with epitaxial and ion implanted bases |
| 260 | |c 1996. | ||
| 856 | |z Get fulltext |u https://eprints.soton.ac.uk/250933/1/1996_Ashburn_BGN.pdf | ||
| 655 | 7 | |a Article | |