Single-transverse-mode Ti:sapphire rib waveguide laser

Laser operation of Ti:sapphire rib waveguides fabricated using photolithography and ion beam etching in pulsed laser deposited layers is reported. Polarized laser emission was observed at 792.5 nm with an absorbed pump power threshold of 265 mW, which is more than a factor of 2 lower in comparison t...

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Bibliographic Details
Main Authors: Grivas, C. (Author), Shepherd, D.P (Author), May-Smith, T.C (Author), Eason, R.W (Author), Pollnau, M. (Author)
Format: Article
Language:English
Published: 2005.
Subjects:
Online Access:Get fulltext
LEADER 01091 am a22001693u 4500
001 16076
042 |a dc 
100 1 0 |a Grivas, C.  |e author 
700 1 0 |a Shepherd, D.P.  |e author 
700 1 0 |a May-Smith, T.C.  |e author 
700 1 0 |a Eason, R.W.  |e author 
700 1 0 |a Pollnau, M.  |e author 
245 0 0 |a Single-transverse-mode Ti:sapphire rib waveguide laser 
260 |c 2005. 
856 |z Get fulltext  |u https://eprints.soton.ac.uk/16076/1/2955.pdf 
520 |a Laser operation of Ti:sapphire rib waveguides fabricated using photolithography and ion beam etching in pulsed laser deposited layers is reported. Polarized laser emission was observed at 792.5 nm with an absorbed pump power threshold of 265 mW, which is more than a factor of 2 lower in comparison to their planar counterparts. Measured beam propagation factors M2x and M2y of 1.3 and 1.2, respectively, indicated single-transverse-mode emission. A quasi-cw output power of 27 mW for an absorbed pump power of 1W and a slope efficiency of 5.3% were obtained using an output coupler of 4.6% transmission with a pump duty cycle of 8%. 
655 7 |a Article