|
|
|
|
| LEADER |
01368 am a22001573u 4500 |
| 001 |
13942 |
| 042 |
|
|
|a dc
|
| 100 |
1 |
0 |
|a Grivas, C.
|e author
|
| 700 |
1 |
0 |
|a May-Smith, Timothy
|e author
|
| 700 |
1 |
0 |
|a Shepherd, David
|e author
|
| 700 |
1 |
0 |
|a Eason, R.W.
|e author
|
| 245 |
0 |
0 |
|a On the growth and lasing characteristics of thick Nd:GGG waveguiding films fabricated by pulsed laser deposition
|
| 260 |
|
|
|c 2004.
|
| 856 |
|
|
|z Get fulltext
|u https://eprints.soton.ac.uk/13942/1/2701.pdf
|
| 520 |
|
|
|a Pulsed laser deposition of epitaxial, single-crystal Nd:Gd<sub>3</sub>Ga<sub>5</sub>O<sub>12</sub> (Nd:GGG) films on Y<sub>3</sub>Al<sub>5</sub>O<sub>12</sub> substrates with thicknesses up to 135 µm and propagation losses as low as 0.1 dB/cm is reported. Rutherford backscattering spectrometry has shown constant stoichiometry for the films throughout their depth. Fluorescence properties were similar to that of the bulk Nd:GGG crystal used as a target material for the deposition and lasing action has been observed at 1059.0 and 1060.6 nm after pumping by a Ti:sapphire laser operating at 808 nm. A laser threshold of 18 mW has been obtained and a slope efficiency of 17.5% has been observed using an output coupler of 4.5%. The low losses in combination with the high numerical aperture (0.75) and the thickness of the structures make them suitable for high-power diode pumping.
|
| 655 |
7 |
|
|a Article
|
