Low phonon energy Nd:LaF<sub>3</sub> channel waveguide lasers fabricated by molecular beam epitaxy

We report the first fabrication and laser operation of channel waveguides based on LaF<sub>3</sub> planar thin films grown by molecular beam epitaxy. To our knowledge, this is the lowest phonon energy dielectric material to have shown guided-wave laser operation to date. A full character...

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Bibliographic Details
Main Authors: Bhutta, T. (Author), Chardon, A.M (Author), Shepherd, D.P (Author), Daran, E. (Author), Serrano, C. (Author), Munoz-Yague, A. (Author)
Format: Article
Language:English
Published: 2001.
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042 |a dc 
100 1 0 |a Bhutta, T.  |e author 
700 1 0 |a Chardon, A.M.  |e author 
700 1 0 |a Shepherd, D.P.  |e author 
700 1 0 |a Daran, E.  |e author 
700 1 0 |a Serrano, C.  |e author 
700 1 0 |a Munoz-Yague, A.  |e author 
245 0 0 |a Low phonon energy Nd:LaF<sub>3</sub> channel waveguide lasers fabricated by molecular beam epitaxy 
260 |c 2001. 
856 |z Get fulltext  |u https://eprints.soton.ac.uk/13691/1/2230.pdf 
856 |z Get fulltext  |u https://eprints.soton.ac.uk/13691/2/13691.pdf 
520 |a We report the first fabrication and laser operation of channel waveguides based on LaF<sub>3</sub> planar thin films grown by molecular beam epitaxy. To our knowledge, this is the lowest phonon energy dielectric material to have shown guided-wave laser operation to date. A full characterization, in terms of spectroscopy, laser results, and propagation losses, is given for the planar thin films upon which the channel waveguides are based. Two channel-fabrication methods are then described, the first involves ion milling and the second takes the novel approach of using a photo-definable polymer overlay. Laser operation in Nd-doped samples is demonstrated at 1.06, 1.05, and 1.3 µm, and the potential for mid-infrared laser sources based on such guides is discussed. 
655 7 |a Article