Low phonon energy Nd:LaF<sub>3</sub> channel waveguide lasers fabricated by molecular beam epitaxy
We report the first fabrication and laser operation of channel waveguides based on LaF<sub>3</sub> planar thin films grown by molecular beam epitaxy. To our knowledge, this is the lowest phonon energy dielectric material to have shown guided-wave laser operation to date. A full character...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
2001.
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Online Access: | Get fulltext Get fulltext |
LEADER | 01386 am a22001933u 4500 | ||
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001 | 13691 | ||
042 | |a dc | ||
100 | 1 | 0 | |a Bhutta, T. |e author |
700 | 1 | 0 | |a Chardon, A.M. |e author |
700 | 1 | 0 | |a Shepherd, D.P. |e author |
700 | 1 | 0 | |a Daran, E. |e author |
700 | 1 | 0 | |a Serrano, C. |e author |
700 | 1 | 0 | |a Munoz-Yague, A. |e author |
245 | 0 | 0 | |a Low phonon energy Nd:LaF<sub>3</sub> channel waveguide lasers fabricated by molecular beam epitaxy |
260 | |c 2001. | ||
856 | |z Get fulltext |u https://eprints.soton.ac.uk/13691/1/2230.pdf | ||
856 | |z Get fulltext |u https://eprints.soton.ac.uk/13691/2/13691.pdf | ||
520 | |a We report the first fabrication and laser operation of channel waveguides based on LaF<sub>3</sub> planar thin films grown by molecular beam epitaxy. To our knowledge, this is the lowest phonon energy dielectric material to have shown guided-wave laser operation to date. A full characterization, in terms of spectroscopy, laser results, and propagation losses, is given for the planar thin films upon which the channel waveguides are based. Two channel-fabrication methods are then described, the first involves ion milling and the second takes the novel approach of using a photo-definable polymer overlay. Laser operation in Nd-doped samples is demonstrated at 1.06, 1.05, and 1.3 µm, and the potential for mid-infrared laser sources based on such guides is discussed. | ||
655 | 7 | |a Article |