Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE

Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE

This work presents an investigation of the fully strained GaAsN/GaAs heterostructures obtained by atmospheric pressure metalorganic vapor phase epitaxy, focusing on the analysis of the strain generated in the GaAsN epilayers and its correlation with the formation of split interstitial complexes (N-A...

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Bibliographic Details
Main Authors: Dawidowski, W. (Author), de la Cruz, V.G (Author), Gabás, M. (Author), Jadczak, J. (Author), López-Escalante, M.C (Author), Radziewicz, D. (Author), Ściana, B. (Author)
Format: Article
Language:English
Published: MDPI 2022
Subjects:
Alloying
Alloying effect
AP-MOVPE
Atmospheric pressure
dilute nitrides
Dilute-nitride
Epilayers
GaAsN epilayers
Gallium alloys
Gallium arsenide
HRXRD
III/V semiconductors
III-V semiconductors
Interstitial complexes
Interstitial defects
Lattice mismatch
Local strains
Metallorganic vapor phase epitaxy
Nitrogen interstitial complex
nitrogen interstitial complexes
Raman spectroscopy
Semiconducting gallium
Semiconductor alloys
Semiconductor quantum wells
X ray diffraction analysis
X ray photoelectron spectroscopy
XPS
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