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01744nam a2200241Ia 4500 |
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10.3389-fphy.2022.854393 |
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220510s2022 CNT 000 0 und d |
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|a 2296424X (ISSN)
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| 245 |
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|a Time-Domain Analysis of Chalcogenide Threshold Switching: From ns to ps Scale
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| 260 |
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|b Frontiers Media S.A.
|c 2022
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| 856 |
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|z View Fulltext in Publisher
|u https://doi.org/10.3389/fphy.2022.854393
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|a A space- and time-dependent theoretical model based on a trap-assisted, charge-transport framework for the amorphous phase of a chalcogenide material is used here to interpret available experimental results for the electric current of nanoscale devices in the ns–ps time domain. A numerical solution of the constitutive equations of the model for a time-dependent bias has been carried out for GST-225 devices. The “intrinsic” rise time of the device current after the application of a suitable external bias is controlled by the microscopic relaxation of the mobile-carrier population to the steady-state value. Furthermore, the analysis is extended to include the effect of the external circuit on the electrical switching. A quantitative estimate of the current delay time due to unavoidable parasitic effects is made for the optimised electrical set up configurations recently used by experimental groups. Copyright © 2022 Brunetti, Jacoboni, Piccinini and Rudan.
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|a amorphous materials
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|a chalcogenides
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|a charge transport
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|a GST
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|a ovonic threshold switching
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|a phase change memories
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|a Brunetti, R.
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|a Jacoboni, C.
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|a Piccinini, E.
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|a Rudan, M.
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| 773 |
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|t Frontiers in Physics
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