Temperature Effect on the Performance Stability of Power RF Transistor Based on Advanced Electrothermal Modelling

This paper presents the investigation results of the electrothermal performance degradation of the RF power transistor. A comparative study of these degradations was conducted using 2D numerical modeling (ADS) for different temperature conditions. The MET model used is based on the wide signal equiv...

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Bibliographic Details
Main Author: Almusallam, A. (Author)
Format: Article
Language:English
Published: Seventh Sense Research Group 2023
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Summary:This paper presents the investigation results of the electrothermal performance degradation of the RF power transistor. A comparative study of these degradations was conducted using 2D numerical modeling (ADS) for different temperature conditions. The MET model used is based on the wide signal equivalent circuit. This complex electric circuit comprises elements having a precise physical meaning acting on the component performance. Thus, any change in the value of these elements impacts performance. It makes it possible to estimate the device's dependability and lifetime more accurately. It can also be utilized to establish a link between the sorts of current failures and the electrical parameter drifts. The proposed model performs better than average in terms of accuracy and adaptability, and the results show that they are in accordance with the operational conditions. © 2023 Seventh Sense Research Group®.
Physical Description:5
ISBN:23488549 (ISSN)
DOI:10.14445/23488549/IJECE-V10I3P102