A new approach to studying the electrical behavior and the inhomogeneities of the Schottky barrier height
In this paper, two Schottky structures of Au/n-GaAs (sample A) and Au/0.8 nm-GaN/n-GaAs (sample B) were fabricated and electrically characterized by current–voltage measurements at different temperatures. Two models, a classical one and another previously proposed named Helal model ref (Helal et al....
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Springer Science and Business Media Deutschland GmbH
2022
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| Online Access: | View Fulltext in Publisher |