Gm/ID Approach for Low Power Sustaining Amplifier Circuit for GHz Range MEMS SAW Oscillator

• Main Authors: Kamarudin, N.B (Author), Karim, J. (Author), Ralib, A.A.M (Author)
• Format: Article
• Language: English
• Published: Institute of Electrical and Electronics Engineers Inc. 2019
• Subjects: Acoustic surface wave devices; Acoustic waves; Amplifier circuits; Cascode amplifiers; CMOS integrated circuits; Design and simulation; Design circuits; Electromechanical devices; Integrated circuit design; Low power electronics; MEMS; MEMS SAW Oscillator; Micro electromechanical system (MEMS); Microwave circuits; Nanoelectronics; Operational amplifiers; Oscillators (electronic); Phase noise; Regulated cascode; Resonators; SAW oscillators; SAW Resonator; SAW resonators; Surface acoustic wave resonators; Timing circuits; Transimpedance amplifier
• Online Access: View Fulltext in Publisher; View in Scopus
• ISBN: 9781728104591 (ISBN)
• DOI: 10.1109/RSM46715.2019.8943524

This paper presents the design and simulation of microelectromechanical system (MEMS) based oscillator based on CMOS MEMS surface acoustic wave (SAW) resonator and regulated cascode configuration (RGC) transimpedance amplifier (TIA). The proposed TIA is designed in a standard 0.18 \mu\mathrm{m} Silterra CMOS prosess via Cadence Virtuoso software. Gm/ID technique is used to achieve higher gain and low power TIA. The simulation result shows that the voltage gain of the design circuit is 35.5dB and 2.08 GHz -3dB bandwidth. The circuit consume 1.6mW power at 1.8 V supply voltage. When integrate with 1.4GHz resonator, the phase noise of this oscillator is -105.27 dBc/Hz at 1kHz and -116.03 dBc/Hz 10kHz. © 2019 IEEE.