High-Gain 670-GHz Amplifier Circuits in InGaAs-on-Insulator HEMT Technology

• Main Authors: Chartier, S. (Author), John, L. (Author), Leuther, A. (Author), Massler, H. (Author), Merkle, T. (Author), Tessmann, A. (Author)
• Format: Article
• Language: English
• Published: Institute of Electrical and Electronics Engineers Inc. 2022
• Subjects: Amplifier circuits; Amplifiers; Electron mobility; Gain cell; Gate-length; High electron mobility transistors; High electron-mobility transistors; High gain; High-electron-mobility transistor; high-electron-mobility transistor (HEMT); Ingaas-on-insulator; InGaAs-on-insulator (InGaAs-OI); Light amplifiers; Semiconducting indium; Semiconducting indium gallium arsenide; silicon; Silicon; Six stages; Substrates; THz; Timing circuits; Transferred substrate
• Online Access: View Fulltext in Publisher

 In this letter, we report on the development of high-gain WR-1.5 amplifier circuits, utilizing a transferred-substrate InGaAs-on-insulator (InGaAs-OI) high-electron-mobility transistor (HEMT) technology on Si with 20-nm gate length. A six-stage and a nine-stage amplifier circuit are described, which are based on gain cells in cascode configuration. With more than 30 dB of measured gain in the frequency band of 660-700 GHz, the highest frequency of operation of transferred-substrate THz amplifiers is reported. These gain levels in excess of 30 dB, furthermore, correspond to the highest reported gain values and state-of-the-art performance around the targeted 670-GHz frequency band. © 2001-2012 IEEE.