Low Power Phase Change Memory using Silicon Carbide as a Heater Layer

The amorphous to crystalline transition of germanium-antimony-tellurium (GST) using two types heating element was investigated. With separate heater structure, simulation was done using COMSOL Multiphysic 5.0. Silicon carbide (SiC) and Titanium Sitride (TiSi3) has been selected as a heater and diffe...

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Bibliographic Details
Main Authors:	Alip, R.I (Author), Aziz, M.S (Author), Herman S.H (Author), Hosaka, S. (Author), Mohammed, Z. (Author), Yin, Y. (Author)
Format:	Article
Language:	English
Published:	Institute of Physics Publishing 2015
Subjects:	Amorphous-to-crystalline transition Antimony Electronic equipment Low Power Memory layers Phase change memory Silicon Silicon carbide Silicon carbides (SiC) Tellurium compounds Thermoelectric equipment Titanium Titanium compounds
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by Alip, RI, Aziz, MS, Hosaka, S, Mohammed, Z, Yin, Y
Published 2015

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Low Power Phase Change Memory using Silicon Carbide as a Heater Layer

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