Low Power Phase Change Memory using Silicon Carbide as a Heater Layer

• Main Authors: Alip, R.I (Author), Aziz, M.S (Author), Herman S.H (Author), Hosaka, S. (Author), Mohammed, Z. (Author), Yin, Y. (Author)
• Format: Article
• Language: English
• Published: Institute of Physics Publishing 2015
• Subjects: Amorphous-to-crystalline transition; Antimony; Electronic equipment; Low Power; Memory layers; Phase change memory; Silicon; Silicon carbide; Silicon carbides (SiC); Tellurium compounds; Thermoelectric equipment; Titanium; Titanium compounds
• Online Access: View Fulltext in Publisher; View in Scopus

 The amorphous to crystalline transition of germanium-antimony-tellurium (GST) using two types heating element was investigated. With separate heater structure, simulation was done using COMSOL Multiphysic 5.0. Silicon carbide (SiC) and Titanium Sitride (TiSi3) has been selected as a heater and differences of them have been studied. The voltage boundary is 0.905V and temperature of the memory layer is 463K when using SIC as a heater. While the voltage boundary and temperature of memory layer when using TiSi3 are 1.103 V and 459K respectively. Based on the result of a simulation, the suitable material of heater layer for separate heater structure is Silicon carbide (SiC) compared with Titanium Sitride (TiSi3). © Published under licence by IOP Publishing Ltd.