Design of 2.4Ghz CMOS Floating Active Inductor LNA using 130nm Technology
This paper presents about design and optimization of CMOS active inductor integrated circuit. This active inductor implements using Silterra 0.13μm technology and simulated using Cadence Virtuoso and Spectre RF. The center frequency for this active inductor is at 2.4 GHz which follow IEEE 802.11 b/g...
Main Authors: | , , |
---|---|
Format: | Article |
Language: | English |
Published: |
Institute of Physics Publishing
2018
|
Subjects: | |
Online Access: | View Fulltext in Publisher View in Scopus |
LEADER | 02124nas a2200325Ia 4500 | ||
---|---|---|---|
001 | 10.1088-1757-899X-341-1-012008 | ||
008 | 220120c20189999CNT?? ? 0 0und d | ||
020 | |a 17578981 (ISSN) | ||
245 | 1 | 0 | |a Design of 2.4Ghz CMOS Floating Active Inductor LNA using 130nm Technology |
260 | 0 | |b Institute of Physics Publishing |c 2018 | |
650 | 0 | 4 | |a Active inductors |
650 | 0 | 4 | |a Cadence virtuosos |
650 | 0 | 4 | |a Center frequency |
650 | 0 | 4 | |a Cmos active inductors |
650 | 0 | 4 | |a CMOS integrated circuits |
650 | 0 | 4 | |a Design and optimization |
650 | 0 | 4 | |a Electric inductors |
650 | 0 | 4 | |a IEEE 802.11s |
650 | 0 | 4 | |a IEEE Standards |
650 | 0 | 4 | |a Integrated circuit design |
650 | 0 | 4 | |a LNA circuit |
650 | 0 | 4 | |a Low noise amplifier circuits |
650 | 0 | 4 | |a Low noise amplifiers |
650 | 0 | 4 | |a Noise figure |
856 | |z View Fulltext in Publisher |u https://doi.org/10.1088/1757-899X/341/1/012008 | ||
856 | |z View in Scopus |u https://www.scopus.com/inward/record.uri?eid=2-s2.0-85046368658&doi=10.1088%2f1757-899X%2f341%2f1%2f012008&partnerID=40&md5=2346b50c6f574885f322dfba9d444a0c | ||
520 | 3 | |a This paper presents about design and optimization of CMOS active inductor integrated circuit. This active inductor implements using Silterra 0.13μm technology and simulated using Cadence Virtuoso and Spectre RF. The center frequency for this active inductor is at 2.4 GHz which follow IEEE 802.11 b/g/n standard. To reduce the chip size of silicon, active inductor is used instead of passive inductor at low noise amplifier LNA circuit. This inductor test and analyse by low noise amplifier circuit. Comparison between active with passive inductor based on LNA circuit has been performed. Result shown that the active inductor has significantly reduce the chip size with 73 % area without sacrificing the noise figure and gain of LNA which is the most important criteria in LNA. The best low noise amplifier provides a power gain (S21) of 20.7 dB with noise figure (NF) of 2.1dB. © Published under licence by IOP Publishing Ltd. | |
700 | 1 | 0 | |a Muhamad, M. |e author |
700 | 1 | 0 | |a Ramiah, H. |e author |
700 | 1 | 0 | |a Soin, N. |e author |