Growth and characterization of non-polar GaN materials and investigation of efficiency droop in InGaN light emitting diodes

Growth and characterization of non-polar GaN materials and investigation of efficiency droop in InGaN light emitting diodes

General lighting with InGaN light emitting diodes (LEDs) as light sources is of particular interest in terms of energy savings and related environmental benefits due to high lighting efficiency, long lifetime, and Hg-free nature. Incandescent and fluorescent light sources are used for general lighti...

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Bibliographic Details
Main Author: Ni, Xianfeng
Format: Others
Published: VCU Scholars Compass 2010
Subjects:
GaN
InGaN
light emitting diodes
efficiency
electroluminescence
electron overflow
non-polar
MOCVD
photoluminescence
m-plane
a-plane
c-plane
carrier spillover
efficiency droop
epitaxial growth
lateral overgrowth
LEDs
current crowding
internal quantum efficiency
external quantum efficiency
Hot electron
silicon
distributed Bragg reflectors
nitrides
xrd
sem
electron blocking layer
junction heating
semi-polar
nonpolar
Auger
recombination
Electrical and Computer Engineering
Engineering
Online Access:http://scholarscompass.vcu.edu/etd/2235
http://scholarscompass.vcu.edu/cgi/viewcontent.cgi?article=3234&context=etd

Internet

http://scholarscompass.vcu.edu/etd/2235
http://scholarscompass.vcu.edu/cgi/viewcontent.cgi?article=3234&context=etd

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