Band Bending in GaN

Steady-state and transient surface photovoltages in undoped GaN are studied in various environments (air, nitrogen, oxygen, vacuum) at room temperature and 400 K with a Kelvin probe attached to an optical cryostat. The results are explained within a phenomenological model accounting for the accumula...

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Main Author:	Foussekis, Michael
Format:	Others
Published:	VCU Scholars Compass 2009
Subjects:	Band Bending GaN Kelvin Probe Surface Potential Physical Sciences and Mathematics Physics
Online Access:	http://scholarscompass.vcu.edu/etd/1781 http://scholarscompass.vcu.edu/cgi/viewcontent.cgi?article=2780&context=etd

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spelling	ndltd-vcu.edu-oai-scholarscompass.vcu.edu-etd-27802017-03-17T08:30:30Z Band Bending in GaN Foussekis, Michael Steady-state and transient surface photovoltages in undoped GaN are studied in various environments (air, nitrogen, oxygen, vacuum) at room temperature and 400 K with a Kelvin probe attached to an optical cryostat. The results are explained within a phenomenological model accounting for the accumulation of photo-generated holes at the surface, capture of free electrons from the bulk over the near-surface potential barrier, and emission of electrons from surface states into the bulk. Mechanisms of surface photovoltage are discussed in detail. Photoadsorption and photodesorption of negatively charged species will either increase or decrease the surface potential and thus band bending. Oxygen is the assumed species responsible for the SPV changes in air ambient during continuous UV illumination. This variation in SPV will be confirmed with photoluminescence measurements. 2009-04-22T07:00:00Z text application/pdf http://scholarscompass.vcu.edu/etd/1781 http://scholarscompass.vcu.edu/cgi/viewcontent.cgi?article=2780&context=etd © The Author Theses and Dissertations VCU Scholars Compass Band Bending GaN Kelvin Probe Surface Potential Physical Sciences and Mathematics Physics
collection	NDLTD
format	Others
sources	NDLTD
topic	Band Bending GaN Kelvin Probe Surface Potential Physical Sciences and Mathematics Physics
spellingShingle	Band Bending GaN Kelvin Probe Surface Potential Physical Sciences and Mathematics Physics Foussekis, Michael Band Bending in GaN
description	Steady-state and transient surface photovoltages in undoped GaN are studied in various environments (air, nitrogen, oxygen, vacuum) at room temperature and 400 K with a Kelvin probe attached to an optical cryostat. The results are explained within a phenomenological model accounting for the accumulation of photo-generated holes at the surface, capture of free electrons from the bulk over the near-surface potential barrier, and emission of electrons from surface states into the bulk. Mechanisms of surface photovoltage are discussed in detail. Photoadsorption and photodesorption of negatively charged species will either increase or decrease the surface potential and thus band bending. Oxygen is the assumed species responsible for the SPV changes in air ambient during continuous UV illumination. This variation in SPV will be confirmed with photoluminescence measurements.
author	Foussekis, Michael
author_facet	Foussekis, Michael
author_sort	Foussekis, Michael
title	Band Bending in GaN
title_short	Band Bending in GaN
title_full	Band Bending in GaN
title_fullStr	Band Bending in GaN
title_full_unstemmed	Band Bending in GaN
title_sort	band bending in gan
publisher	VCU Scholars Compass
publishDate	2009
url	http://scholarscompass.vcu.edu/etd/1781 http://scholarscompass.vcu.edu/cgi/viewcontent.cgi?article=2780&context=etd
work_keys_str_mv	AT foussekismichael bandbendingingan
_version_	1718428394379542528

Band Bending in GaN

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