Embedded Multilayer Thin Film Stacks as Polarizing Beam Splitters and Wave Retarders Operating under Condition of Frustrated Total Internal Reflection

The polarization properties of embedded centro-symmetric and periodic multilayer stacks under conditions of frustrated total internal reflection (FTIR) are considered. The centro-symmetric multilayer stack consists of a high-index center layer sandwiched between two identical low-index films and hig...

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Bibliographic Details
Main Author: Reddy, Perla Siva
Format: Others
Published: ScholarWorks@UNO 2007
Online Access:http://scholarworks.uno.edu/td/1079
http://scholarworks.uno.edu/cgi/viewcontent.cgi?article=2060&context=td
Description
Summary:The polarization properties of embedded centro-symmetric and periodic multilayer stacks under conditions of frustrated total internal reflection (FTIR) are considered. The centro-symmetric multilayer stack consists of a high-index center layer sandwiched between two identical low-index films and high-index – low-index bilayers repeated on both sides of the central trilayer maintaining the symmetry of the entire stack. The periodic multilayer consists of periodically repeated low-index – high-index bilayers. Each multilayer stack is embedded in a high-index prism. Embedded centro-symmetric multilayer stacks are designed to function as efficient polarizers or polarizing beam splitters (PBSs) under conditions of FTIR over an extended range of incidence angles. For a given set of refractive indices, all possible solutions for the thicknesses of the layers that suppress the reflection of p-polarized light at a specified angle, and the associated reflectance of the system for the orthogonal s polarization, are determined. The angular and spectral sensitivities of polarizing multilayer stacks employing 3, 7, 11, 15 and 19 layers of BaF2 and PbTe thin films embedded in a ZnS prism, operating at ë = 10.6 ìm, are presented. Embedded centro-symmetric multilayer stacks are also designed to function as complete-transmission quarter-wave or half-wave retardation (QWR or HWR) devices under conditions of FTIR. QWR and HWR designs at ë =1.55 mì are presented that employ 11 and 7 layers of Si and SiO2 thin films embedded in GaP and Si cube prisms, respectively. The angular and spectral sensitivities of these devices are also considered. Embedded centro-symmetric multilayer stacks under FTIR conditions are also designed to produce various 50%-50% beam splitters. Embedded periodic multilayer stacks are designed to function as polarizers and PBSs at discrete multiple angles of incidence and wavelengths under condition of FTIR. For a given set of refractive indices, all possible solutions for the thicknesses of the layers that suppress the reflection of p-polarized light at a specified angle, and the associated reflectance of the system for the orthogonal s polarization, are determined. The angular and spectral sensitivities of polarizing multilayer stacks employing 4, 6, 8, 10, 12, 14, 16 and 18 layers of BaF2 and PbTe thin films embedded in a ZnS prism, operating at ë= 10.6 ìm, are presented.