Photoinduced electronic transitions and leakage correlation to defects/dislocations in GaN heterostructures
III-nitride materials are very promising for high speed electronics/optical applications but still suffer in performance due to problems during high quality epitaxial growth, evolution of dislocation and defects, less understanding of fundamental physics of materials/processing of devices etc. This...
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| Format: | Doctoral Thesis |
| Language: | en |
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Alma Mater Studiorum - Università di Bologna
2013
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| Online Access: | http://amsdottorato.unibo.it/5190/ |