Phase separation and defect formation in stable, metastable, and unstable GaInSaSb alloys for infrared applications
GaInAsSb is a promising material for mid-infrared devices such as lasers and detectors because it is a direct band gap material with large radiative coefficient and a cut-off wavelength that can be varied across the mid-infrared (from 1.7 to 4.9 μm) while remaining lattice matched to GaSb. On the ot...
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| Format: | Others |
| Language: | English |
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University of Iowa
2014
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| Online Access: | https://ir.uiowa.edu/etd/1520 https://ir.uiowa.edu/cgi/viewcontent.cgi?article=5527&context=etd |