Wachstum und Charakterisierung von AlSb/InAs- und AlInSb/InSb-Quantentopfstrukturen mittels Molekularstrahlepitaxie

Wachstum und Charakterisierung von AlSb/InAs- und AlInSb/InSb-Quantentopfstrukturen mittels Molekularstrahlepitaxie

In der vorliegenden Arbeit wird das Wachstum mittels Molekularstrahlepitaxie von Quantentopfstrukturen aus den Halbleitersystemen AlSb/InAs und AlInSb/InSb untersucht. Strukturell charakterisiert wird das Wachstum mit in situ Reflection-High-Elektron-Energy-Diffraction (RHEED), sowie den ex situ Met...

Full description

Bibliographic Details
Main Author:	Sigmund, Jochen
Format:	Others
Language:	German de
Published:	2004
Online Access:	http://tuprints.ulb.tu-darmstadt.de/405/1/Sigmund_PhD.pdf Sigmund, Jochen <http://tuprints.ulb.tu-darmstadt.de/view/person/Sigmund=3AJochen=3A=3A.html> : Wachstum und Charakterisierung von AlSb/InAs- und AlInSb/InSb-Quantentopfstrukturen mittels Molekularstrahlepitaxie. [Online-Edition] Technische Universität, Darmstadt [Ph.D. Thesis], (2004)

Similar Items

Electron transport in InSb/AlInSb semiconductor heterostructures
by: Pooley, Oliver James
Published: (2011)

Investigation of InAs/AlSb/GaSb-Based Structures and GaSb/AlSb/InAs/GaSb/AlSb/InAs Broken-Gap Interband Tunneling Structures
by: Liu, Meng-Hwang, et al.
Published: (1997)

A study of current transport in Schottky diodes based on AlInSb/InSb-QW heterostructures
by: Alshaeer, Fadwa
Published: (2018)

Magnetotransport studies of InAs/GaSb/AlSb-based structures
by: Cooper, L. J.
Published: (2000)

Study to The Growth of AlSb and AlAsSb
by: Xu, Jing-Hao, et al.
Published: (1996)

Study to The Growth of AlSb and AlAsSb
by: Hsu, Ching-Hao, et al.
Published: (1996)

Trumpabangiai InAs/AlSb kvantiniai kaskadiniai lazeriai
by: Devenson, Jan
Published: (2010)

Channel Characteristics of InAs/AlSb Heterojunction Epitaxy: Comparative Study on Epitaxies with Different Thickness of InAs Channel and AlSb Upper Barrier
by: He Guan, et al.
Published: (2019-05-01)

Hot electron's quantum yield and research of GaSb/AlSb/InAs transistor
by: Jyh-Chyang Sheu, et al.
Published: (1995)

Hot electron''s quantum yield and research of GaSb/AlSb/InAs transistor
by: Xu, Zhi-Qiang, et al.
Published: (1995)

InAs/AlSb short wavelength quantum cascade lasers
by: Devenson, Jan
Published: (2010)

Development of InAs/AlSb Metal-Oxide-Semiconductor HEMT
by: Da-Wei Fan, et al.
Published: (2009)

InAs/AlSb/GaSb系列帶間共振穿透特性研究
by: SHEN,ZHONG-LI, et al.
Published: (1991)

Impact of Al content on InAs/AlSb/Al(x)Ga(1−x)Sb tunnelling diode
by: Yuping Zeng, et al.
Published: (2017-06-01)

Study of the vibrational modes of GaSb/AlSb (001) superlattices
by: D. Berdekas
Published: (2009-01-01)

Device Fabrication and Characterization of InAs/AlSb High Electron Mobility Transistors
by: Yu-Chao Lin, et al.

Development of InGaSb/AlSb High Hole Mobility HFET
by: Geng-Ying Liau, et al.
Published: (2010)

Investigation of high optical gain (MIR region) in AlSb/InAs/GaAsSb type-II quantum well heterostructure
by: Syed Firoz Haider, et al.
Published: (2021-12-01)

Resonant tunneling of electrons in AlSb/GaInAsSb double barrier quantum wells
by: Edgar David Guarin Castro, et al.
Published: (2020-05-01)

Fabrication and Characterization of InGaSb/AlSb High Hole Mobility Transistors
by: Hsuan-Wei Huang, et al.
Published: (2013)

Avalanche Photodetector Based on InAs/InSb Superlattice
by: Arash Dehzangi, et al.
Published: (2020-12-01)

Development of Submicron Device Processes and Analysis of Device Degradation Mechanisms for InAs/AlSb HEMTs
by: Hong-Kai Liu, et al.
Published: (2011)

Passivation Process Development and Device Characterization for InAs/AlSb High Electron Mobility Transistors
by: Wei-Zhi He, et al.
Published: (2010)

Transport studies in AlSb/InAs quantum well at low temperature and high magnetic field
by: Yun Lung Hwang, et al.
Published: (1999)

100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications
by: Cyrille Gardès, et al.
Published: (2014-01-01)

Self-Catalyzed InSb/InAs Quantum Dot Nanowires
by: Omer Arif, et al.
Published: (2021-01-01)

Magnetotransport properties of InSb-MnSb nanostructured films
by: Kochura Aleksey, et al.
Published: (2018-01-01)

Amorphous InSb and InAs[subscript 0.3]Sb[subscript 0.7] for long wavelength infrared detection
by: Zens, Timothy, et al.
Published: (2013)

Evaporation kinetics in InSb
by: Wong, Frederick K.
Published: (2015)

First-principles calculations to investigate structural, electronic and optical properties of (AlSb)m/(GaSb)n superlattices
by: Caid M., et al.
Published: (2020-06-01)

Ternary invariant point at 374°C in the three phase region AlSb-Al-Zn inside the Al-Sb-Zn ternary system
by: Klančnik G., et al.
Published: (2011-01-01)

High resolution electron loss spectroscopy on InAs and InSb (001) surfaces
by: Bell, Gavin Richard
Published: (1996)

Time Resolved Spectroscopy in InAs and InSb based Narrow-Gap Semiconductors
by: Bhowmick, Mithun
Published: (2017)

Nouvelles sources lasers à super réseau InAs/GaSb/InSb pour l'émission moyen infrarouge
by: Gassenq, Alban
Published: (2010)

Epitaktisches Wachstum und Transportuntersuchung topologisch isolierender Materialien: GaSb/InAs Doppelquantenfilme und Bi\(_2\)Se\(_3\) Nanostrukturen
by: Knebl, Georg
Published: (2019)

Molekularstrahlepitaxie und Charakterisierung von (Ga,Mn)As Halbleiterschichten
by: Schott, Gisela Marieluise
Published: (2004)

InSb integrated optical devices
by: Liu, Bing De, et al.
Published: (1994)

Conduction in thin InSb films
by: Ho, Ling Chung
Published: (1972)

EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES
by: D. A. Yatsyna, et al.
Published: (2019-06-01)

Non-Debye heat capacity formula refined and applied to GaP, GaAs, GaSb, InP, InAs, and InSb
by: R. Pässler
Published: (2013-08-01)

Cannot write session to /tmp/vufind_sessions/sess_47915pd8l3iqp4v8vavhmr0j5j