Caractérisation électrique et modélisation de la dynamique de commutation résistive dans des mémoires OxRAM à base de HfO2

Caractérisation électrique et modélisation de la dynamique de commutation résistive dans des mémoires OxRAM à base de HfO2

Les mémoires résistives à base d’oxyde OxRAM sont une technologie de mémoire non-volatile dite émergente, au même titre que les mémoires à changement de phase (PCRAM) ou les mémoires magnétorésistives (MRAM). A l’origine les OxRAM étaient très étudiées pour concurrencer les mémoires Flash, dont le f...

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Bibliographic Details
Main Author:	Nguyen, Clément
Other Authors:	Grenoble Alpes
Language:	fr
Published:	2018
Subjects:	Oxram ReRAM Mémoires non volatiles Commutation Modélisation Caractérisation Non volatile memories Switching Modeling Characterization 620
Online Access:	http://www.theses.fr/2018GREAT035/document

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