Intégration de semi-conducteurs III-V sur substrat Silicium pour les transistors n-MOSFET à haute mobilité

Intégration de semi-conducteurs III-V sur substrat Silicium pour les transistors n-MOSFET à haute mobilité

La substitution du canal de silicium par un semi-conducteur III-V est une des voies envisagées pour accroitre la mobilité des électrons dans les transistors n-MOSFET et ainsi réduire la consommation des circuits. Afin de réduire les coûts et de profiter des plateformes industrielles de la microélect...

Full description

Bibliographic Details
Main Author:	Billaud, Mathilde
Other Authors:	Grenoble Alpes
Language:	fr
Published:	2017
Subjects:	Semi-Conducteurs III-V N-Mosfet Substrat silicium Capacité MOS Densité d’états d’interface InGaAs III-V semiconductors Silicon substrate MOS capacitor Interface states density 620
Online Access:	http://www.theses.fr/2017GREAT010/document

Similar Items

Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs
by: Sanghyeon Kim, et al.
Published: (2019-01-01)

Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
by: Olli-Pekka Kilpi, et al.
Published: (2019-01-01)

A study of electrical and material characteristics of high-k / III-V MOSFETs and SiO2 RRAMs
by: Chen, Yen-Ting
Published: (2013)

Nanometer-Scale III-V MOSFETs
by: Jesus A. Del Alamo, et al.
Published: (2016-01-01)

Passivation de la surface du nitrure de gallium par dépôt PECVD d'oxyde de silicium
by: Chakroun, Ahmed
Published: (2015)

Propriétés structurales, optiques et électriques de nanostructures et alliages à base de GaP pour la photonique intégrée sur silicium
by: Tremblay, Ronan
Published: (2018)

Filière technologique hybride InGaAs/SiGe pour applications CMOS
by: Czornomaz, Lukas
Published: (2016)

High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb
by: Sang-Hyeon Kim, et al.
Published: (2021-01-01)

InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D
by: Po-Chun Chang, et al.
Published: (2018-01-01)

A study of electrical and material characteristics of III-V MOSFETs and TFETs with high-[kappa] gate dielectrics
by: Zhao, Han, 1982-
Published: (2011)

Integration of innovative ohmic contacts for heterogeneous III-V/Silicon Photonic devices
by: Ghegin, Elodie
Published: (2017)

A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-Gate MOSFETs
by: Seiko Netsu, et al.
Published: (2018-01-01)

Characterization of High-Performance InGaAs QW-MOSFETs With Reliable Bi-Layer HfO<sub>x</sub>N<sub>y</sub> Gate Stack
by: Su-Keun Eom, et al.
Published: (2019-01-01)

Modeling and Simulation of Monolithic AlGaAs/InGaAs Tandem Solar Cell
by: Samia SLIMANI, et al.
Published: (2015-06-01)

Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress
by: Haiou Li, et al.
Published: (2020-03-01)

Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince
by: Ridaoui, Mohamed
Published: (2017)

Réaction à l'état solide d'un film mince de Ni(Co) avec InGaAs : analyses microstructurales
by: Zhiou, Seifeddine
Published: (2016)

High Performance Metal-Gate/High-<inline-formula> <tex-math notation="LaTeX">${\kappa } $ </tex-math></inline-formula> GaN MOSFET With Good Reliability for Both Logic and Power Applications
by: Shih-Han Yi, et al.
Published: (2016-01-01)

InGaAs Capacitor-Less DRAM Cells TCAD Demonstration
by: Carlos Navarro, et al.
Published: (2018-01-01)

Photodétecteurs InGaAs Nanostructurés pour l'Imagerie Infrarouge
by: Verdun, Michael
Published: (2016)

InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE
by: Soresi, Stefano
Published: (2018)

Spin dynamics in GaN- and InGaAs-based semiconductor structures
by: Nguyen, Cong Tu
Published: (2014)

Croissance de boîtes quantiques In(Ga)As sur substrats de silicium et de SOI pour la réalisation d'émetteurs de lumière
by: Akra, Ahiram el
Published: (2012)

Simulation de composants électroniques aux fréquences téraHertz
by: Ziadé, Pierre
Published: (2010)

Evaluation of Monolithic 3-D Logic Circuits and 6T SRAMs With InGaAs-n/Ge-p Ultra-Thin-Body MOSFETs
by: Kuan-Chin Yu, et al.
Published: (2016-01-01)

Photoluminescence of ingaas/inp grown by molecular beam epitaxy
by: Harmand Jean Christophe, et al.
Published: (2004-01-01)

Radiation and Annealing Effects on GaN MOSFETs Irradiated by 1 MeV Electrons
by: Lu, T., et al.
Published: (2022)

Performance Analysis of TaSiO<sub>x</sub> Inspired Sub-10 nm Energy Efficient In<sub>0.53</sub>Ga<sub>0.47</sub>As Quantum Well Tri-Gate Technology
by: Sarat K. Saluru, et al.
Published: (2017-01-01)

Modélisation compacte de transistors MOSFETs à canal III-V et films minces pour applications CMOS avancées
by: Hiblot, Gaspard
Published: (2015)

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations
by: Mansur Mohammed Ali Gamel, et al.
Published: (2021-08-01)

Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs
by: Ki-Sik Im, et al.
Published: (2018-01-01)

Estudio de capas de desacoplo de InGaAs/GaAs(001) por crecimiento combinado de MBE-ALMBE en forma dinámica y escalonada
by: Herrera, M., et al.
Published: (2004-04-01)

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability
by: Kalparupa Mukherjee, et al.
Published: (2020-10-01)

Large Lateral Photovoltaic Effect in MoS2/GaAs Heterojunction
by: Lanzhong Hao, et al.
Published: (2017-10-01)

InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities
by: Clarissa Convertino, et al.
Published: (2018-12-01)

Stabilité thermique de structures de type TiN/ZrO2/InGaAs
by: Ceballos Sanchez, Oscar
Published: (2015)

Instability in In<sub>0.7</sub>Ga<sub>0.3</sub>As Quantum-Well MOSFETs with Single-Layer Al<sub>2</sub>O<sub>3</sub> and Bi-Layer Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Gate Stacks Caused by Charge Trapping under Positive Bias Temperature (PBT) Stress
by: Hyuk-Min Kwon, et al.
Published: (2020-12-01)

Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures
by: John Chelliah Cyril R.A., et al.
Published: (2017-11-01)

Nucleation and Growth of Dielectric Films on III-V Semiconductors During Atomic Layer Deposition
by: Granados-Alpizar, Bernal
Published: (2012)

Optimisation de l'épitaxie sous jets moléculaires d'hétérostructures à base de GaN : application aux transistors à haute mobilité d'électrons sur substrat silicium
by: Baron, Nicolas
Published: (2009)