Développement de briques technologiques pour la co-intégration par l'épitaxie de transistors HEMTs AlGaN/GaN sur MOS silicium

Développement de briques technologiques pour la co-intégration par l'épitaxie de transistors HEMTs AlGaN/GaN sur MOS silicium

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L’intégration monolithique hétérogène de composants III-N sur silicium (Si) offre de nombreuses possibilités en termes d’applications. Cependant, gérer l’hétéroépitaxie de matériaux à paramètres de maille et coefficients de dilatation très différents, tout en évitant les contaminations, et concilier...

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Bibliographic Details
Main Author:	Comyn, Rémi
Other Authors:	Côte d'Azur
Language:	fr
Published:	2016
Subjects:	Nitrure de gallium (GaN) Transistor à haute mobilité électronique (HEMT) Circuits CMOS Épitaxie sous jets moléculaires (MBE) Co-intégration Monolithic integration Gallium nitride (GaN) High-electron-mobility transistors (HEMTs) CMOS circuits Molecular beam epitaxy (MBE)
Online Access:	http://www.theses.fr/2016AZUR4098

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