Pulsed I-V and RF characterization and modeling of AIGaN HEMTs and Graphene FETs

Pulsed I-V and RF characterization and modeling of AIGaN HEMTs and Graphene FETs

Ces travaux de recherche se rapportent à l’évaluation des potentialités des transistors à base de graphène ainsi que la mise en évidence des effets dispersifs sur les transistors HEMTs en technologie Nitrure de Gallium. Les principaux résultats issus de ces travaux sont obtenus suite au développemen...

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Bibliographic Details
Main Author:	Nakkala, Poornakarthik
Other Authors:	Limoges
Language:	en
Published:	2015
Subjects:	GaN Graphène HEMT Caractérisation IV impulsionnelle HF caractérisation Effets de piégeage Modélisation Graphene Pulsed I-V characterization HF characterization Trapping effects Modeling 621.381 5
Online Access:	http://www.theses.fr/2015LIMO0028/document

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