Croissance épitaxiale du germanium contraint en tension et fortement dopé de type n pour des applications en optoélectronique intégrée sur silicium

Croissance épitaxiale du germanium contraint en tension et fortement dopé de type n pour des applications en optoélectronique intégrée sur silicium

Le silicium (Si) et le germanium (Ge) sont les matériaux de base utilisés dans les circuits intégrés. Cependant, à cause de leur gap indirect, ces matériaux ne sont pas adaptés à la fabrication de dispositifs d'émission de lumière, comme les lasers ou diodes électroluminescentes. Comparé au Si,...

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Bibliographic Details
Main Author:	Luong, Thi kim phuong
Other Authors:	Aix-Marseille
Language:	en
Published:	2014
Subjects:	Ge/Si Contraint en tension Optoelectronique Fortement dopé type n Co-Dopage P et Sb Tensile strain Optoelectronic Heavy n-Type doping P and Sb co-Doping 530
Online Access:	http://www.theses.fr/2014AIXM4002

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