Simulation, réalisation et caractérisation de jonction p+n en SiC-4H, pour la photodétection de rayonnement UV

Simulation, réalisation et caractérisation de jonction p+n en SiC-4H, pour la photodétection de rayonnement UV

Le SiC est un matériau semi-conducteur à large bande d'énergie interdite dont les très bonnes caractéristiques électriques et thermiques en font un candidat idéal pour la fabrication de composants dans le domaine de la puissance et des détecteurs de rayonnement. En particulier, la réalisation d...

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Bibliographic Details
Main Author:	Biondo, Stéphane
Other Authors:	Aix-Marseille
Language:	fr
Published:	2012
Subjects:	SiC-4H Photodétecteur Ultra Violet Semi-conducteur Implantations Recuits thermiques Simulations FDTD Caractérisations Photodetector Semi-conductor Thermal annealings Charaterisations
Online Access:	http://www.theses.fr/2012AIXM4340

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