Analysis of silicon carbide based semiconductor power devices and their application in power factor correction
Recent technological advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a stage that the present Si-based power devices cannot handle. The requirements include higher block...
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| Format: | Others |
| Language: | en_US |
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Texas A&M University
2005
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| Online Access: | http://hdl.handle.net/1969.1/2573 |