Tunnel MOS Heterostructure Field Effect Transistor for RF Switching Applications
GaN RF switches are widely used in today’s communication systems. With digital communications getting more and more popular nowadays, the need for improving the performance of involved RF switches is inevitable. Designing low ON-state resistance GaN switches are exceedingly important to improve the...
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| Format: | Others |
| Language: | en |
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2013
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| Online Access: | http://hdl.handle.net/1969.1/151047 |