EFFECTS OF INTERNAL FIELDS IN QUANTUM DOTS

• Main Author: Sundaresan, Sasi Sekaran
• Format: Others
• Published: OpenSIUC 2010
• Subjects: Quantum Dots
• Online Access: https://opensiuc.lib.siu.edu/theses/244; https://opensiuc.lib.siu.edu/cgi/viewcontent.cgi?article=1251&context=theses

In this work we study the effect of built in electrostatic fields in Quantum Dots. Built-in electrostatic fields in Zincblende quantum dots originate mainly from--(1) the fundamental crystal atomicity and the interfaces between two dissimilar materials, (2) the strain relaxation, and (3) the piezoelectric polarization. We also study the geometric dependence of built in fields on 3 shapes namely Box, Dome and Pyramid. The main objectives are 3 fold they are (1) Explore the nature and the role of crystal atomicity at the interfaces and built-in fields (strain-field, and piezoelectric polarization) in determining the energy spectrum and the wave functions. (2) To identify the shift in the one-particle energy states, symmetry-lowering and non-degeneracy in the first excited state and strong band-mixing in the overall conduction band electronic states. (3) Finally geometric dependence of the above-mentioned phenomena. We discuss the importance atomistic effects and the need for 3 dimensional atomistic simulator NEMO 3D. We also discuss the effect of built in fields in HEMT (High Electron Mobility Transistor).