A 3.6 GHz Doherty Power Amplifier with a 40 dBm Saturated Output Power using GaN on SiC HEMT Devices

A 3.6 GHz Doherty Power Amplifier with a 40 dBm Saturated Output Power using GaN on SiC HEMT Devices

This manuscript describes the design, development, and implementation of a linear high efficiency power amplifier. The symmetrical Doherty power amplifier utilizes TriQuint's 2nd Generation Gallium Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistor (HEMT) devices (T1G60010...

Full description

Bibliographic Details
Main Author:	Baker, Bryant
Format:	Others
Published:	PDXScholar 2014
Subjects:	Power amplifiers > Design and construction Gallium nitride Silicon carbide Microwave amplifiers Electrical and Computer Engineering
Online Access:	https://pdxscholar.library.pdx.edu/open_access_etds/1781 https://pdxscholar.library.pdx.edu/cgi/viewcontent.cgi?article=2781&context=open_access_etds

Similar Items

Improvement of Small Signal Equivalent Simulations for Power and Efficiency Matching of GaN HEMTs
by: Roberto Quaglia
Published: (2021-01-01)

A Design Strategy for AM/PM Compensation in GaN Doherty Power Amplifiers
by: Vittorio Camarchia, et al.
Published: (2017-01-01)

Linearity Enhancement of High Power GaN HEMT Amplifier Circuits
by: Saini, Kanika
Published: (2019)

Design and Implementation of as Asymmetric Doherty Power Amplifier at 2.65 GHz in GaN HEMT Technology
by: Tarar, Mohsin Mumtaz
Published: (2011)

GaN Monolithic Power Amplifiers for Microwave Backhaul Applications
by: Roberto Quaglia, et al.
Published: (2016-06-01)

Supply Modulation Behavior of a Doherty Power Amplifier
by: Dan Fishler, et al.
Published: (2021-01-01)

Compound Reconfigurable Dual-band Solid State Power Amplifier using a Single GaN HEMT for S and X-band Operations
by: Waldstein, Seth William
Published: (2019)

A Broadband Asymmetrical GaN MMIC Doherty Power Amplifier with Compact Size for 5G Communications
by: Peisen Cheng, et al.
Published: (2021-01-01)

Design Of A Doherty Power Amplifier For GSM Systems
by: Saad Wasmi Osman
Published: (2013-04-01)

A 700MHz to 2.5GHz Cascode GaAs Power Amplifier for Multi-Band Pico-Cell Achieving 20dB Gain, 40dBm to 45dBm OIP3 and 66% Peak PAE
by: Ram Sharma Nitesh, et al.
Published: (2018-01-01)

Wideband Doherty Power Amplifier: A Design Approach
by: Angarita Malaver, E.F, et al.
Published: (2022)

Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios
by: Vittorio Camarchia, et al.
Published: (2014-09-01)

A Fully Integrated C-Band GaN MMIC Doherty Power Amplifier With High Efficiency and Compact Size for 5G Application
by: Guansheng Lv, et al.
Published: (2019-01-01)

168-195 GHz Power Amplifier With Output Power Larger Than 18 dBm in BiCMOS Technology
by: Abdul Ali, et al.
Published: (2020-01-01)

Doherty-Outphasing Power Amplifier Continuum Theory
by: Liang, Chenyu
Published: (2020)

A Doherty Power Amplifier with Extended Bandwidth and Reconfigurable Back-off Level
by: Wu, Yu-Ting David
Published: (2013)

A Doherty Power Amplifier with Extended Bandwidth and Reconfigurable Back-off Level
by: Wu, Yu-Ting David
Published: (2013)

Contribution aux analyses de fiabilité des transistors HEMTs GaN : exploitation conjointe du modèle physique TCAD et des stress dynamiques HF pour l'analyse des mécanismes de dégradation
by: Saugnon, Damien
Published: (2018)

A 0.8 mm<sup>2</sup> Sub-GHz GaAs HBT Power Amplifier for 5G Application Achieving 57.5% PAE and 28.5 dBm Maximum Linear Output Power
by: Ram Sharma Nitesh, et al.
Published: (2019-01-01)

S Band Hybrid Power Amplifier in GaN Technology with Input/Output Multi Harmonic Tuned Terminations
by: Sandro Ghisotti, et al.
Published: (2021-09-01)

Novel Doherty power amplifier design for advanced communication systems.
Published: (2015)

Design and analysis of an integrated pulse modulated S-band power amplifier in gallium nitride process
by: Sedlock, Steve
Published: (2012)

Reliability Study of GaN-on-SiC HEMT RF Power Amplifiers
by: M. Bakowski, et al.
Published: (2018-07-01)

The design of a DC-30 GHz GaAs pHEMT distributed power amplifier
by: Liu Yanpeng, et al.
Published: (2018-10-01)

Design of S band power amplifier based on the GaN HEMT
by: Zhang Shuyuan, et al.
Published: (2019-01-01)

A New Approach to Design a Broadband Doherty Power Amplifier via Dual-Transformation Real Frequency Technique
by: Fan Meng, et al.
Published: (2018-01-01)

A Two-Stage X-Band 20.7-dBm Power Amplifier in 40-nm CMOS Technology
by: Zhichao Li, et al.
Published: (2020-12-01)

Analysis and Design of CMOS Doherty Power Amplifier Based on Voltage Combining Method
by: Chenxi Zhao, et al.
Published: (2017-01-01)

Efficiency Enhancement of Pico-cell Base Station Power Amplifier MMIC in GaN HFET Technology Using the Doherty Technique
by: Seneviratne, Sashieka
Published: (2012)

Efficiency Enhancement of Pico-cell Base Station Power Amplifier MMIC in GaN HFET Technology Using the Doherty Technique
by: Seneviratne, Sashieka
Published: (2012)

Efficiency Enhancement of Pico-cell Base Station Power Amplifier MMIC in GaN HFET Technology Using the Doherty Technique
by: Seneviratne, Sashieka
Published: (2012)

5 Watt GaN HEMT Power Amplifier for LTE
by: K. Niotaki, et al.
Published: (2014-04-01)

Thermal modeling of GaN HEMTs on sapphire and diamond
by: Salm, Roman Peter.
Published: (2012)

High-Efficiency Doherty-Based Power Amplifiers Using GaN Technology For Wireless Infrastructure Applications
Published: (2018)

A Survey on RF and Microwave Doherty Power Amplifier for Mobile Handset Applications
by: Maryam Sajedin, et al.
Published: (2019-06-01)

Broadband Doherty Power Amplifier With Transferable Continuous Mode
by: Decheng Gan, et al.
Published: (2020-01-01)

Resonant Mechanism for a Long-Distance Wireless Power Transfer Using Class E PA and GaN HEMT
by: Chang, E.-Y, et al.
Published: (2023)

Efficiency Enhancement of Base Station Power Amplifiers Using Doherty Technique
by: Viswanathan, Vani
Published: (2011)

Gate Bias Control and Harmonic Load Modulation for a Doherty Amplifier
by: Smith, Karla Jenny Isabella
Published: (2009)

A High-Voltage Low-Power Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices for LED Drivers
by: Lin Fan, et al.
Published: (2018-06-01)

Cannot write session to /tmp/vufind_sessions/sess_5cf48shtaops9r1lcm1pg2rqaa