| Summary: | Approved for public release, distribution unlimited === The purpose of this thesis was to build a transient model and to study the electrical and thermal characteristics of the AlGaN/GaN HEMT. We first used Method 3104 of MIL-STD 750D to determine the location of HEMT structure that gate voltage measurement relates to. Secondly, we investigated the performance of single pulse and multiple pulses. Thirdly, we studied and compared the performance between the DC model and the Transient model (multiple pulses) with the same power. Finally, we compared the self-heating effect between various substrates and discussed the observation of unique transistor heating. Based on the analysis of these simulation results, we would be able to predict the performance of the AlGaN/GaN HEMT.
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