Computer simulation of the sputtering process
The sputtering of Cu fcc (110), (100) and (111) surfaces by 1- to 10-keV A+ ions at normal incidence has been investigated by high-speed digital computer techniques. The interatomic repulsions are described by Born-Mayer potentials. The shape of the sputtering ratio curves are in close agreement wit...
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Monterey, California. Naval Postgraduate School
2013
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| Online Access: | http://hdl.handle.net/10945/36982 |
| Summary: | The sputtering of Cu fcc (110), (100) and (111) surfaces by 1- to 10-keV A+ ions at normal incidence has been investigated by high-speed digital computer techniques. The interatomic repulsions are described by Born-Mayer potentials. The shape of the sputtering ratio curves are in close agreement with the data of Magnuson and Carlston. Ejection patterns in accord with experimental observations are predicted. There is evidence that the sputtering mechanism is not the result of momentum focusing. |
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