Computer simulation of the sputtering process
The sputtering of Cu fcc (110), (100) and (111) surfaces by 1- to 10-keV A+ ions at normal incidence has been investigated by high-speed digital computer techniques. The interatomic repulsions are described by Born-Mayer potentials. The shape of the sputtering ratio curves are in close agreement wit...
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Monterey, California. Naval Postgraduate School
2013
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| Online Access: | http://hdl.handle.net/10945/36982 |