Comparison of Gallium Nitride High Electron Mobility Transistors modeling in two and three dimensions
This thesis looks at modeling Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Semiconductors. The GaN device has potential future military use in the high power and high frequency operation replacing costly millimeter wave tubes. This would affect military radar systems, electronic...
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Monterey California. Naval Postgraduate School
2012
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| Online Access: | http://hdl.handle.net/10945/3177 http://hdl.handle.net/10945/3177 |