Comparison of Gallium Nitride High Electron Mobility Transistors modeling in two and three dimensions
This thesis looks at modeling Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Semiconductors. The GaN device has potential future military use in the high power and high frequency operation replacing costly millimeter wave tubes. This would affect military radar systems, electronic...
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Monterey California. Naval Postgraduate School
2012
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| Online Access: | http://hdl.handle.net/10945/3177 http://hdl.handle.net/10945/3177 |
| Summary: | This thesis looks at modeling Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Semiconductors. The GaN device has potential future military use in the high power and high frequency operation replacing costly millimeter wave tubes. This would affect military radar systems, electronic surveillance systems, communications systems and high voltage power systems by providing smaller and more reliable devices to drive operation. This thesis looks at using diamond substrate to improve the thermal management of a HEMT device over that of a sapphire substrate. The improved thermal management should lead to improved operating characteristics and reliability. The HEMT device was modeled using Silvaco software package and compared to an actual device on sapphire substrate. The HEMT modeling was done in two and three dimension modeling software. The results of the software model showed the improved thermal characteristics of the HEMT device on the diamond substrate over that of the sapphire. |
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