Metallization of CVD diamond using metal oxide intermediate layers for electronics packaging
The high thermal conductivity of chemically vapor deposited CVD diamond (up to 2000 W/m/K) and its low dielectric constant (approx. 5.6) makes it highly desirable for use as an electronics packaging substrate material. To make CVD diamond amenable to thick film metallization via standard industrial...
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| Language: | English |
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Monterey, California. Naval Postgraduate School
2013
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| Online Access: | http://hdl.handle.net/10945/26062 |