Direct imaging of minority charge carrier transport in triple junction solar cell layers
An optical, contact-free method for measuring minority carrier diffusion lengths is developed and demonstrated for a range of semiconductor materials used in high efficiency triple junction solar cells. This method uses a Scanning Electron Microscope (SEM) coupled with an optical microscope. The...
Main Author: | Mills, Ted Jonathan |
---|---|
Other Authors: | Haegel, Nancy M. |
Format: | Others |
Published: |
Monterey California. Naval Postgraduate School
2012
|
Subjects: | |
Online Access: | http://hdl.handle.net/10945/2472 |
Similar Items
-
Luminescence and transport processes of charge carriers in the GaxIn₁-xP/GaAs double-junction tandem solar cells
by: Deng, Zhuo, et al.
Published: (2015) -
Effect of Alpha-Particle Irradiation on InGaP/GaAs/Ge Triple-Junction Solar Cells
by: Jing Xu, et al.
Published: (2018-06-01) -
Direct imaging of minority charge carrier transport in luminescent semiconductors
by: Luber, David R.
Published: (2012) -
Characterization of Al2O3 as CIGS surface passivation layer in high-efficiency CIGS solar cells
by: Joel, Jonathan
Published: (2014) -
Daylight luminescence system for silicon solar panels based on a bias switching method
by: Miguel Guada, et al.
Published: (2020-11-01)