A single-transistor memory cell and sense amplifier for a gallium arsenide dynamic random access memory
Approved for public release; distribution is unlimited === This thesis presents the design and layout of a Gallium Arsenide (GaAs) Dynamic Random Access Memory (DRAM) cell. Attempts have been made at producing GaAs DRAM cells, but these have dealt with modifications to the fabrication process, are...
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| Language: | en_US |
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Monterey, California. Naval Postgraduate School
2012
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| Online Access: | http://hdl.handle.net/10945/24038 |