Effects of 30 MEV electron irradation on InGaAsp LEDS and InGaAs photodiodes.

Effects of 30 MEV electron irradation on InGaAsp LEDS and InGaAs photodiodes.

Bibliographic Details
Main Author:	O'Reilly, Patrick J.
Language:	en_US
Published:	2012
Online Access:	http://hdl.handle.net/10945/21811

Similar Items

Quantum well intermixing in 1.55 um InGaAs/AlInGaAs and InGaAs/InGaAsP structures and applications
by: Liu, Xuefeng
Published: (2002)

Investigation of InGaAsP Heterostructure Field-effect Transistors and Photodiodes
by: Yen-Wei Chen, et al.
Published: (2005)

Estudo da mobilidade eletrônica nos compostos InGaASP
by: Ceolin, Mauricio Francisco, 1954-
Published: (1983)

Investigation of InP-based high electron mobility transistor using InGaAs and InGaAsP channel
by: En-Go Ro, et al.
Published: (2003)

Design and characterisation of InGaAs high speed photodiodes, InGaAs/InAlAs avalanche photodiodes and novel AlAsSb based avalanche photodiodes
by: Xie, Shiyu
Published: (2012)

Fabrication and Study of InGaAsP/InGaAs/InP Heterojunction Bipolar Transistors (HBTs)
by: Kuan-Ming Lee, et al.
Published: (2003)

Methods for improving the photoresponse of InGaAs PIN photodiode
by: Chuang, Jia-Hao, et al.
Published: (2012)

The development of terahertz spectroscopy systems based on Fe-InGaAs and Fe-InGaAsP photoconductive materials
by: Hatem, Osama Elsayed Abdelrazik
Published: (2011)

The Fabrication of 620nm InGaP-InGaAsP SH LEDs
by: Yung-Hui Yea, et al.
Published: (1993)

InGaAs Avalanche Photodiode for Single-Photon-Detector Application
by: 嚴浩天
Published: (2007)

A Novel InGaAs PhotodiodeFabrication and Its Application
by: Wen-Chen Li, et al.
Published: (2013)

Spectral and Spatial Quantum Efficiency of AlGaAs/GaAs and InGaAs/InP PIN Photodiodes
by: Tabor, Steven Alan
Published: (1991)

Photonic integration in InGaAs/InGaAsP multiple-quantum well laser structures using quantum well intermixing
by: Qiu, Bocang
Published: (1998)

Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes
by: Siyu Cao, et al.
Published: (2018-05-01)

Characterisation of low noise InGaAs/AlAsSb avalanche photodiodes
by: Xie, Jingjing
Published: (2013)

Fabrication of InGaAsP/InGaAsP Electro-absorption Modulator by Wet Etching
by: Dan-Long Lee, et al.
Published: (2004)

Fabrication of InGaAs/GaAs IR Resonant-Cavity LED
by: Yi-Hao Wu, et al.
Published: (2005)

30 MeV electron beam irradiation effects on GaAs1-xPxLEDS.
by: Foley, James Kevin.
Published: (2012)

The Development of SAGCM InP/InGaAs Planar type Avalanche Photodiode
by: Ting-HsuanLin, et al.
Published: (2019)

Characterization of InGaAs/InP Avalanche Photodiode for Single Photon Detection
by: Chien-Hung Chiu, et al.
Published: (2009)

Balanced InP/InGaAs Photodiodes With 1.5-W Output Power
by: Qiugui Zhou, et al.
Published: (2013-01-01)

Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes
by: Siyu Cao, et al.
Published: (2019-01-01)

High-Speed InGaAs P-I-N Photodiodes for Fiberoptic Communications
by: Chong-Long Ho, et al.
Published: (2000)

The design and fabrication of planar-type InGaAs/InP avalanche photodiodes
by: R.W. Huang, et al.
Published: (2001)

InGaAs Communication Photodiodes: From Low- to High-Power-Level Designs
by: M. Achouche, et al.
Published: (2010-01-01)

An InGaAlAs-InGaAs two-colour detector, InAs photodiode and Si SPAD for radiation thermometry
by: Zhou, Xinxin
Published: (2014)

Integrated GaN-based LED and monitoring photodiode
by: Chou-Tzu Chieh, et al.
Published: (2019)

Fabrication and Characterization of Planar-Type InP/InGaAs SAGCM Avalanche Photodiodes
by: Jheng-Jie Liou, et al.
Published: (2008)

Singlet oxygen luminescence detector based on low-cost InGaAs avalanche photodiode
by: Alexander E. Moskalensky, et al.
Published: (2021-10-01)

High-Performance InGaAs/InP Semiconductor Photodiodes for Optical Fiber Communication
by: Ho, Wen-Jeng, et al.
Published: (1997)

The design and fabrication of planar-type InP/InGaAs SAGCM avalanche photodiodes
by: Lin, Zhe-Shi, et al.
Published: (1998)

Evaluation of InGaAs/InP photodiode for high-speed operation at 4 K
by: Bardalen Eivind, et al.
Published: (2018-01-01)

An InGaAs/AlAsSb Avalanche Photodiode With a Small Temperature Coefficient of Breakdown
by: Jingjing Xie, et al.
Published: (2013-01-01)

Modulation Spectroscopy and Photoluminescence Study of InGaAsP/InP Strained-layer Multiple Quantum Well and InGaAsP/ InGaAsP Strain-compensated Multiple Quantum Well
by: Wu Cheng En, et al.
Published: (2003)

The Study of Gain for GaInNAs、AlInGaAs and InGaAsP Semiconductor Materials
by: Ming-shiun Tsai, et al.
Published: (2006)

Characterisation of InGaAsP heterojunction photodetectors
by: Thompson, D. M.
Published: (1994)

Degradation analysis of 1 MeV electron and 3 MeV proton irradiated InGaAs single junction solar cell
by: X. B. Shen, et al.
Published: (2019-07-01)

Investigation of AlGaAs/InGaAs/GaAs High Electron Mobility Transistors
by: Bo-Yuan Chen, et al.
Published: (2006)

Ohmic Contacts With Ultra-Low Optical Loss on Heavily Doped n-Type InGaAs and InGaAsP for InP-Based Photonic Membranes
by: L. Shen, et al.
Published: (2016-01-01)

Fabrication and Characterization of high speed planar-type InGaAs/InP avalanche photodiodes
by: Cho-Chun Chiang, et al.
Published: (2018)

Cannot write session to /tmp/vufind_sessions/sess_0sleiea0etkpv8kbv59lvddd8q