A study on the sintering of fine-grained diamond-SiC composites
Fine-grained diamond preforms (D[v, 0.9] = 2 μm) have been successfully infiltrated with silicon. The infiltration of fine-grained diamond preforms using silicon is limited by the blocking of the pores as a result of the volume increase during the reaction of diamond with Si to form SiC. The pref...
| Main Author: | |
|---|---|
| Format: | Others |
| Language: | en |
| Published: |
2010
|
| Online Access: | http://hdl.handle.net/10539/8659 |