Electrical resistivity of the kondo systems (Ce1−xREx)In3, RE = Gd, Tb, Dy AND Ce(Pt1−xNix)Si2

Electrical resistivity of the kondo systems (Ce1−xREx)In3, RE = Gd, Tb, Dy AND Ce(Pt1−xNix)Si2

>Magister Scientiae - MSc === The present study investigates the strength of the hybridization by substituting Ce atom in Kondo lattice CeIn3 with Gd, Tb, and Dy and by changing the chemical environment around the Ce atom in substituting Pt with Ni in CePtSi2. This thesis covers four chapters out...

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Bibliographic Details
Main Author: Tshabalala, Kamohelo George
Other Authors: Tchokonté, Moїse Bertin Tchoula
Language:en
Published: University of the Western Cape 2014
Subjects:
Cerium compounds
(Ce1−xREx)In3
Kondo lattice
Electrical resistivity
Antiferromagnetic
Quantum critical point
Fermi-liquid behaviour
Ce(Pt1−xNix)Si2
Crystal electric field
Heavy-fermion systems
Online Access:http://hdl.handle.net/11394/3789

Internet

http://hdl.handle.net/11394/3789

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