Raman spectroscopic investigation of radiation damage in carbon implanted diamond

Analog and digital structures can be written into thin surface layers of semiconductors by using focused ion beams of submicron dimensions. By inducing the phase transition from the crystalline (c) to the amorphous state (a) optical contrast is generated between areas of different exposure. The aim...

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Main Author: Prinsloo, Linda Charlotta
Other Authors: Friedland, Erich Karl Helmuth
Published: 2013
Subjects:
Online Access:http://hdl.handle.net/2263/27642
Prinsloo, LC 2001, Raman spectroscopic investigation of radiation damage in carbon implanted diamond, MSc dissertation, University of Pretoria, Pretoria, viewed yymmdd < http://hdl.handle.net/2263/27642 >
http://upetd.up.ac.za/thesis/available/etd-02092006-152019/
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spelling ndltd-netd.ac.za-oai-union.ndltd.org-up-oai-repository.up.ac.za-2263-276422017-07-20T04:11:20Z Raman spectroscopic investigation of radiation damage in carbon implanted diamond Prinsloo, Linda Charlotta Friedland, Erich Karl Helmuth upetd@up.ac.za Chemistry technical Diamonds high density optical recording medium Semiconductors effect of radiation on UCTD Analog and digital structures can be written into thin surface layers of semiconductors by using focused ion beams of submicron dimensions. By inducing the phase transition from the crystalline (c) to the amorphous state (a) optical contrast is generated between areas of different exposure. The aim of this study was to investigate the properties of diamond as a high-density optical recording medium and to determine the corresponding irradiation parameters. To this end, single crystals of diamond were irradiated with self-ions of 75 key energy with fluences between F=0.3-l0xlO15 C/cm2 at about 100 K. The radiation damage, persisting after annealing treatments between 300-1700 K, was studied by Raman measurements, monitoring changes in the atomic bonding arrangements. Since the scattering cross-section of C sp2 bonds is 50x that of C sp3 bonds, this is an extremely sensitive technique in detecting changes in the initially purely sp3 state. The position and linewidth of the characteristic first-order phonon of crystalline diamond at 1332 cm-l reflect crystallinity and stress level, while bands between 1350-1700 cm-l indicate disorder. In utilizing the microscopic resolution of a Raman facility additional information was obtained on the spatial variation of the damage level. The optimum annealing temperature was found to be 1500 K. For F > 3xlO15C/cm2, the damage was irreversible, for F = 3xlO15C/cm2 the damage was only partly repaired after annealing at 1500 K and, for F < 3xlO15C/ cm2, the crystalline/amorphous contrast was reversible. For F < lxl015C/ cm2 Raman spectroscopy was not sensitive enough to detect the incurred damage. Infrared spectroscopy was used to classify the diamond samples according to type. Dissertation (MSc (Chemistry))--University of Pretoria, 2006. Chemistry unrestricted 2013-09-07T11:55:43Z 2006-02-13 2013-09-07T11:55:43Z 2001-09-01 2006-02-13 2006-02-09 Dissertation http://hdl.handle.net/2263/27642 Prinsloo, LC 2001, Raman spectroscopic investigation of radiation damage in carbon implanted diamond, MSc dissertation, University of Pretoria, Pretoria, viewed yymmdd < http://hdl.handle.net/2263/27642 > H703/ag http://upetd.up.ac.za/thesis/available/etd-02092006-152019/ © 2001, University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria.
collection NDLTD
sources NDLTD
topic Chemistry technical
Diamonds high density optical recording medium
Semiconductors effect of radiation on
UCTD
spellingShingle Chemistry technical
Diamonds high density optical recording medium
Semiconductors effect of radiation on
UCTD
Prinsloo, Linda Charlotta
Raman spectroscopic investigation of radiation damage in carbon implanted diamond
description Analog and digital structures can be written into thin surface layers of semiconductors by using focused ion beams of submicron dimensions. By inducing the phase transition from the crystalline (c) to the amorphous state (a) optical contrast is generated between areas of different exposure. The aim of this study was to investigate the properties of diamond as a high-density optical recording medium and to determine the corresponding irradiation parameters. To this end, single crystals of diamond were irradiated with self-ions of 75 key energy with fluences between F=0.3-l0xlO15 C/cm2 at about 100 K. The radiation damage, persisting after annealing treatments between 300-1700 K, was studied by Raman measurements, monitoring changes in the atomic bonding arrangements. Since the scattering cross-section of C sp2 bonds is 50x that of C sp3 bonds, this is an extremely sensitive technique in detecting changes in the initially purely sp3 state. The position and linewidth of the characteristic first-order phonon of crystalline diamond at 1332 cm-l reflect crystallinity and stress level, while bands between 1350-1700 cm-l indicate disorder. In utilizing the microscopic resolution of a Raman facility additional information was obtained on the spatial variation of the damage level. The optimum annealing temperature was found to be 1500 K. For F > 3xlO15C/cm2, the damage was irreversible, for F = 3xlO15C/cm2 the damage was only partly repaired after annealing at 1500 K and, for F < 3xlO15C/ cm2, the crystalline/amorphous contrast was reversible. For F < lxl015C/ cm2 Raman spectroscopy was not sensitive enough to detect the incurred damage. Infrared spectroscopy was used to classify the diamond samples according to type. === Dissertation (MSc (Chemistry))--University of Pretoria, 2006. === Chemistry === unrestricted
author2 Friedland, Erich Karl Helmuth
author_facet Friedland, Erich Karl Helmuth
Prinsloo, Linda Charlotta
author Prinsloo, Linda Charlotta
author_sort Prinsloo, Linda Charlotta
title Raman spectroscopic investigation of radiation damage in carbon implanted diamond
title_short Raman spectroscopic investigation of radiation damage in carbon implanted diamond
title_full Raman spectroscopic investigation of radiation damage in carbon implanted diamond
title_fullStr Raman spectroscopic investigation of radiation damage in carbon implanted diamond
title_full_unstemmed Raman spectroscopic investigation of radiation damage in carbon implanted diamond
title_sort raman spectroscopic investigation of radiation damage in carbon implanted diamond
publishDate 2013
url http://hdl.handle.net/2263/27642
Prinsloo, LC 2001, Raman spectroscopic investigation of radiation damage in carbon implanted diamond, MSc dissertation, University of Pretoria, Pretoria, viewed yymmdd < http://hdl.handle.net/2263/27642 >
http://upetd.up.ac.za/thesis/available/etd-02092006-152019/
work_keys_str_mv AT prinsloolindacharlotta ramanspectroscopicinvestigationofradiationdamageincarbonimplanteddiamond
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